Simultaneous identification of structural stiffness and mass parameters based on Bare-bones Gaussian Tree Seeds Algorithm using time-domain data

This paper mainly illustrates the Tree Seeds Algorithm (TSA) to tackle structural damage identification problem. The damage model is simulated by the alterations of both stiffness and mass parameters. The objective function is introduced by minimizing the differences between the measured and calculated acceleration data. To enhance the performance of the standard TSA, two modifications including the bare-bones Gaussian updated mechanism and the withering process are introduced. The modified algorithm is named after the BGTSA. In the numerical simulation part, the BGTSA is firstly used to make comparisons with several state-of-the-art algorithms on the CEC05. Secondly, the BGTSA is utilized to deal with the structural damage identification problem by optimizing the acceleration-based nonlinear objective function. Numerical experiments involving a simply supported beam and a truss are carried out to verify the effectiveness of the proposed algorithm. The final results show that with low amount of acceleration data, the BGTSA can acquire better identification results compared with other evolutionary algorithms. Therefore the proposed algorithm could be viewed as a potential tool to solve the structural damage identification problem.     

Strain-rate dependence of surface/subsurface deformation mechanisms during nanoscratching tests of GGG single crystal

Constant- and varied-depth nanoscratching tests of GGG single crystal were carried out at different scratching velocities. The morphologies of the scratched grooves and chips were analysed using scanning electron microscope. The experimental results indicated that higher scratching velocity led to shallower penetration depth, shallower residual depth, and larger continuous chips. Increasing the scratching velocity could effectively improve the plasticity and reduce the brittle-to-ductile transition depth of GGG single crystal. Based on the contact stress and contact area between the analysed sample and Berkovich indenter, a model for predicting the penetration depth was developed, which took into account the strain rate effect and elastic recovery of materials. The model was verified using constant- and varied-depth nanoscratching tests, and the predicted and experimental results were in good agreement. Subsurface damage underneath the ductile surface was characterised using transmission electron microscope. The TEM results demonstrated that higher scratching velocity led to the slipping planes appearing in more directions, which prevented the generation of long slipping plane and reduced the depth of the damage layers. The plastic deformation of GGG at the scratching velocity of 100 μm/s was dominated by poly-crystalline nanocrystallites and amorphous phases, and was similar to that at the low scratching velocity. This study provided a fundamental understanding of the strain-rate dependence of surface/subsurface deformation mechanisms of GGG during ultra-precision machining.     

高熵合金的抗辐照性能研究进展

高熵合金作为一种新型多主元固溶体合金，成分复杂、全局无序，且具有多主元效应，表现出较为优异的综合性能，有望作为新型抗辐照结构材料应用于先进核能反应堆系统。本文介绍了目前高熵合金抗辐照性能的研究现状，主要涉及高熵合金辐照缺陷演化、微观结构变化和性能退化等辐照损伤演化过程，梳理了多主元效应对辐照损伤演化过程的影响规律。针对高熵合金的抗辐照性能研究，总结了目前高熵合金的几种抗辐照损伤机制，归纳了高熵合金抗辐照性能研究存在的问题，以及对高熵合金后续的研究方向进行了展望。     

瞬态闭锁试验在0.13 μm大规模集成电路中引起的潜在损伤

瞬态剂量率辐射试验会引起集成电路发生损伤或失效，其原因至少有两种：闭锁大电流引起的电路内部金属互连熔融；累积电离总剂量引起的氧化层电荷造成阈值电压偏移。本文以一种0.13 μm体硅CMOS处理器为对象，研究了瞬态剂量率和稳态电离总剂量辐射效应规律。结果表明：瞬态剂量率闭锁效应对处理器造成了显著的潜在损伤，导致其总剂量失效阈值从1 030 Gy(Si)降低至600 Gy(Si)。研究结论对于大规模集成电路的可靠性评估和指导辐射加固设计有重要参考意义。     

基于线状特性的大数据地铁用户识别与定位方法

从MR原始数据特性出发研究数据结构与字段,采用基于线状特性分析MR大数据的地铁用户识别过滤方法和位置定位方法,该方法经过验证能够有效输出地铁用户数据并定位在地图上,解决人工地铁测试效率低且测试片面的问题,实现基于大数据的自动化地铁网络评估,提供海量的有效定位数据用于地铁评估与分析。     

深圳抽水蓄能电站监控新技术应用研究与实践

通过对安防、工业电视和门禁等新技术的研究,设计了一套先进的监控系统,包括硬件平台、系统管理、应用软件,利用深圳抽水蓄能电站已形成的光纤网络通道把分布在方圆10 km范围内多个站端设备以环路的方式连接起来,把可靠成熟的新技术融合到整个平台。自首台机组成功投运,监控系统为电站正常运行保驾护航,高清摄像机、视觉识别、行为分析、边界防护等新技术的应用为工程项目增添了亮点,使电站现场管理更加智能化、规范化。     

核电厂电气设备陶瓷部件受风生飞射物的冲击破坏

为研究沿海台风中的风生飞射物对核电厂电气设备的冲击破坏，以核电厂户外高压电气设备的陶瓷绝缘材料为研究对象，基于LS-DYNA和HyperMesh，分析陶瓷部件在小球和钢管打击下的破坏情况。结果表明：在受到钢管垂直打击时，陶瓷部件很容易发生破坏；在受到小球冲击时，陶瓷部件局部表面发生破坏。进一步计算得到小球对陶瓷部件的临界破坏冲击速度，可为后续设计和研究提供参考。     

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO₂ nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO₂ nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.